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MRFE6VS25Nr1 1 rf device data freescale semiconductor, inc. rf power ldmos transistor high ruggedness n--channel enhancement--mode lateral mosfet rf power transistor designed for both narrowband and broadband ism, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 mhz. this device is fabricated using freescale?s enhanced ruggedness platform and is suitable for use in applications where high vswrs are encountered. typical performance: v dd =50volts frequency (mhz) signal type p out (w) g ps (db) d (%) imd (dbc) 1.8to30 (1) two--tone (10 khz spacing) 25 pep 25 51 -- 3 0 512 pulse (100 sec, 20% duty cycle) 25 peak 25.4 74.5 ? 512 cw 25 25.5 74.7 ? 1030 cw 25 22.5 60 ? 1. the values shown are the minimum m easured performance numbers across the indicated frequency range. load mismatch/ruggedness frequency (mhz) signal type vswr p out (w) test voltage result 30 cw >65:1 at all phase angles 31 (3 db overdrive) 50 no device degradation 512 pulse (100 sec, 20% duty cycle) 31 peak (3 db overdrive) 512 cw 30.5 (3 db overdrive 1030 cw 31 (3 db overdrive features ? wide operating frequency range ? extremely rugged ? unmatched, capable of very broadband operation ? integrated stab ility enhancements ? low thermal resistance ? extended esd protection circuit ? in tape and reel. r1 suffix = 500 units, 24 mm tape width, 13 inch reel. 1.8--2000 mhz, 25 w, 50 v wideband rf power ldmos transistor MRFE6VS25Nr1 note: the backside of the package is the source terminal for the transistor. (top view) drain 12 figure 1. pin connections gate t o -- 2 7 0 -- 2 plastic document number: MRFE6VS25N rev. 0, 6/2012 freescale semiconductor technical data ? freescale semiconductor, inc., 2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +133 vdc gate--source voltage v gs --6.0, +10 vdc storage temperature range t stg --65 to +150 c case operating temperature t c --40 to +150 c operating junction temperature (1,2) t j --40 to +225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case cw: case temperature 80 c, 25 w cw, 50 vdc, i dq = 10 ma, 512 mhz r jc 1.2 c/w thermal impedance, junction to case pulse: case temperature 77 c, 25 w peak, 100 sec pulse width, 20% duty cycle, 50 vdc, i dq = 10 ma, 512 mhz z jc 0.29 c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2, passes 2500 v machine model (per eia/jesd22--a115) b, passes 250 v charge device model (per jesd22--c101) iv, passes 2000 v table 4. moisture sensitivity level test methodology rating package peak temperature unit per jesd22--a113, ipc/jedec j--std--020 3 260 c table 5. electrical characteristics (t a =25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 400 nadc drain--source breakdown voltage (v gs =0vdc,i d =50ma) v (br)dss 133 142 ? vdc zero gate voltage drain leakage current (v ds =50vdc,v gs =0vdc) i dss ? ? 2 adc zero gate voltage drain leakage current (v ds = 100 vdc, v gs =0vdc) i dss ? ? 7 adc on characteristics gate threshold voltage (v ds =10vdc,i d =85 adc) v gs(th) 1.5 2.0 2.5 vdc gate quiescent voltage (v dd =50vdc,i d = 10 madc, measured in functional test) v gs(q) 2.0 2.4 3.0 vdc drain--source on--voltage (v gs =10vdc,i d = 210 madc) v ds(on) ? 0.28 ? vdc dynamic characteristics reverse transfer capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c rss ? 0.26 ? pf output capacitance (v ds =50vdc 30 mv(rms)ac @ 1 mhz, v gs =0vdc) c oss ? 14.2 ? pf input capacitance (v ds =50vdc,v gs =0vdc 30 mv(rms)ac @ 1 mhz) c iss ? 39.2 ? pf 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. (continued)
MRFE6VS25Nr1 3 rf device data freescale semiconductor, inc. table 5. electrical characteristics (t a =25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) v dd =50vdc,i dq =10ma,p out = 25 w peak (5 w avg.), f = 512 mhz, 100 sec pulse width, 20% duty cycle power gain g ps 24.0 25.4 27.0 db drain efficiency d 70.0 74.5 ? % input return loss irl ? -- 1 6 -- 1 0 db load mismatch/ruggedness (in freescale test fixture, 50 ohm system, i dq =10ma) frequency (mhz) signal type vswr p out (w) test voltage, v dd result 512 pulse (100 sec, 20% duty cycle) >65:1 at all phase angles 31 peak (3 db overdrive) 50 no device degradation cw 30.5 (3 db overdrive)
4 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 typical characteristics 60 0.1 100 020 10 v ds , drain--source voltage (volts) figure 2. capacitance versus drain--source voltage c, capacitance (pf) 30 c iss 10 1 c oss c rss measured with 30 mv(rms)ac @ 1 mhz v gs =0vdc i dq =10ma figure 3. normalized v gs versus quiescent current and case temperature normalized v gs(q) t c , case temperature ( c) 1.06 1.04 1.02 1 0.98 0.96 0.94 100 -- 4 0 0 --20 20 40 60 v dd =50vdc 250 10 8 90 t j , junction temperature ( c) 10 7 10 6 10 4 110 130 150 170 190 mttf (hours) 210 230 10 5 i d =0.6amps 0.7 amps 0.9 amps 150 ma v dd =50vdc 40 50 80 100 ma 50 ma figure 4. mttf versus junction temperature -- cw note: mttf value represents the total cumulative operating time under indicated test conditions. 10 i dq (ma) slope (mv/ c) 50 100 150 --2.160 --1.790 --1.760 --1.680
MRFE6VS25Nr1 5 rf device data freescale semiconductor, inc. 512 mhz narrowband production test fixture figure 5. MRFE6VS25Nr1 narrowband test circuit component layout ? 512 mhz MRFE6VS25N rev. 1 cut out area c1 b1 c2 c3 l1 c4 c8 c7 c5* c6 c9* c10* c11 c12 c15 b2 l3 l2 c13 c14 *c5, c9 and c10 are mounted vertically. table 6. MRFE6VS25Nr1 narrowband test circuit component designations and values ? 512 mhz part description part number manufacturer b1, b2 long ferrite beads 2743021447 fair-rite c1 22 f, 35 v tantalum capacitor t491x226k035at kemet c2, c13 0.1 f chip capacitors cdr33bx104akwy avx c3, c14 0.01 f chip capacitors c0805c103k5rac kemet c4,c11,c12 180 pf chip capacitors atc100b181jt300xt atc c5 18 pf chip capacitor atc100b180jt500xt atc c6 2.7 pf chip capacitor atc100b2r7bt500xt atc c7 15 pf chip capacitor atc100b150jt500xt atc c8 36 pf chip capacitor atc100b360jt500xt atc c9 4.3 pf chip capacitor atc100b4r3ct500xt atc c10 13 pf chip capacitor atc100b130jt500xt atc c15 470 f, 63 v electrolytic capacitor mcgpr63v477m13x26-rh multicomp l1 33 nh inductor 1812sms-33njlc coilcraft l2 12.5 nh inductor a04tjlc coilcraft l3 82 nh inductor 1812sms-82njlc coilcraft pcb 0.030 , r =2.55 ad255a arlon
6 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 z1 0.235 0.082 microstrip z2 0.042 0.082 microstrip z3 0.682 0.082 microstrip z4* 0.200 0.060 microstrip z5 0.324 0.060 microstrip z6* 0.200 0.060 microstrip z7 0.067 0.082 microstrip z8 0.142 0.082 microstrip z9 0.481 0.082 microstrip z10 0.190 0.270 microstrip z11 0.475 0.270 microstrip z12 0.091 0.082 microstrip z13 0.170 0.082 microstrip z14* 0.670 0.082 microstrip z15 0.280 0.082 microstrip z16* 0.413 0.082 microstrip z17* 0.259 0.082 microstrip z18 0.761 0.082 microstrip z19 0.341 0.082 microstrip * line length includes microstrip bends table 7. MRFE6VS25Nr1 narrowband test circuit microstrips ? 512 mhz description microstrip description microstrip figure 6. MRFE6VS25Nr1 narrowband test circuit schematic ? 512 mhz z1 rf input c5 z2 z4 dut c11 rf output v bias v supply c2 c13 c15 + z16 z3 z5 c3 z15 z14 z13 z12 z11 z10 z8 z7 z6 c1 z17 z18 c14 c6 c7 c8 l1 b1 + c4 z9 l2 c9 c10 z19 b2 l3 c12
MRFE6VS25Nr1 7 rf device data freescale semiconductor, inc. typical characteristics ? 512 mhz p in , input power (dbm) 40 35 30 25 p out , output power (dbm) 45 15 20 50 20 15 25 010 5 512 27.8 31.4 f (mhz) p1db (w) p3db (w) 0 v gs , gate--source voltage (volts) figure 7. cw output power versus gate--source voltage at a constant input power 0 35 30 p out , output power (watts) 15 10 5 234 v dd =50vdc p in =0.07w f = 512 mhz figure 8. cw output power versus input power 19 27 0.3 10 90 1 25 23 70 60 50 40 30 p out , output power (watts) figure 9. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) 26 24 22 10 50 25 _ c t c =--30 _ c 85 _ c 85 _ c v dd =50vdc i dq =10ma f = 512 mhz 25 _ c -- 3 0 _ c 21 20 25 20 1 g ps v dd =50vdc i dq =10ma f = 512 mhz 20 80 d
8 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 512 mhz narrowband production test fixture v dd =50vdc,i dq =10ma,p out = 25 w peak f mhz z source ? z load ? 512 1.56 + j11.6 9.5 + j18.3 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 10. narrowband series equivalent source and load impedance ? 512 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
MRFE6VS25Nr1 9 rf device data freescale semiconductor, inc. 1.8--30 mhz broadband reference circuit table 8. 1.8--30 mhz broadband performance (in freescale reference circuit, 50 ohm system) v dd =50volts,i dq = 100 ma signal type p out (w) f (mhz) g ps (db) d (%) imd (dbc) two-tone (10 khz spacing) 25 pep 1.8 25.7 51.5 --30.7 10 25.8 50.7 --34.8 30 24.8 50.7 --33.0 table 9. load mismatch/ruggedness (in freescale reference circuit, 50 ohm system, i dq =25ma) frequency (mhz) signal type vswr p out (w) test voltage, v dd result 30 pulse (100 sec, 20% duty cycle) >65:1 at all phase angles 29 peak (3 db overdrive) 50 no device degradation cw 31 (3 db overdrive)
10 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 1.8--30 mhz broadband reference circuit figure 11. MRFE6VS25Nr1 broadband reference circuit component layout ? 1.8--30 mhz + mrfe6vs25h/n rev. 0 cut out area c3 *c1 and c11 are mounted vertically. c2 c4 c5 e1, l1 c1* r1 c9 q1 e2, l2 c11* c10 c8 c7 c6 table 10. MRFE6VS25Nr1 broadband reference circuit component designations and values ? 1.8--30 mhz part description part number manufacturer c1, c5, c6, c9, c11 20k pf chip capacitors atc200b203kt50xt atc c2 10 f, 35 v tantalum capacitor t491d106k035at kemet c3 0.1 f chip capacitor cdr33bx104akwy avx c4 2.2 f chip capacitor c3225x7r1h225kt tdk c7 0.1 f chip capacitor grm319r72a104ka01d murata c8 2.2 f chip capacitor g2225x7r225kt3ab atc c10 220 f, 100 v electolytic capacitor mcgpr100v227m16x26-rh multicomp e1 #43 ferrite toroid 5943001101 fair--rite e2 #61 ferrite toroid 5961001101 fair--rite l1 4 turns, #22 awg, toroid transformer with ferrite e1 8077 copper magnetic wire belden l2 26 turns, #22 awg, toroid transformer with ferrite e2 8077 copper magnetic wire belden q1 rf power ldmos transistor MRFE6VS25Nr1 freescale r1 1k ? , 3 w chip resistor cpf31k0000fke14 vishay pcb 0.030 , r =4.8 s1000 shenzhen multilayer pcb technology
MRFE6VS25Nr1 11 rf device data freescale semiconductor, inc. z1, z10 0.141 0.047 microstrip z2, z9 0.625 0.047 microstrip z3 0.119 0.219 microstrip z4, z8 0.422 0.241 microstrip z5, z6 0.469 0.263 microstrip z7 0.119 0.063 microstrip table 11. MRFE6VS25Nr1 broadband reference test circuit microstrips ? 1.8--30 mhz description microstrip description microstrip figure 12. MRFE6VS25Nr1 broadband reference circuit schematic ? 1.8--30 mhz z1 rf input c1 z2 dut c11 rf output v bias v supply c3 c7 c10 + z5 c4 z6 c2 z9 c8 + c5 z10 e1, l1 z3 z4 r1 z8 c9 z7 e2, l2 c6
12 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 typical characteristics ? 1.8--30 mhz broadband reference circuit p in , input power (dbm) 38 42 p out , output power (dbm) 40 44 46 36 12 14 f=10mhz 16 18 24 28 v dd =50vdc i dq =25ma 20 22 26 p out ,output power (watts) d , drain efficiency (%) 0 g ps f, frequency (mhz) figure 13. power gain, cw output power and drain efficiency versus frequency at a constant input power 20 28 27 22 75 69 66 26 24 d g ps , power gain (db) 26 25 24 21 51015 30 63 v dd =50vdc,p in =0.1w i dq =25ma p out 23 22 20 25 28 0 v gs , gate--source voltage (volts) figure 14. cw output power versus gate--source voltage at a constant input power 0 35 30 p out , output power (watts) 20 10 0.5 1 2.5 3 1.5 2 3.5 v dd =50vdc p in =0.1w 30 mhz 72 25 15 5 f=10mhz 1.8 mhz figure 15. cw output power versus input power 1.8 10 30 23 25 25 28 30 30 f (mhz) p1db (w) p3db (w) 18 26 5 10 90 10 24 22 60 50 40 30 20 p out , output power (watts) figure 16. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) 23 21 20 30 35 25 70 g ps v dd =50vdc i dq =25ma d 10 mhz 19 15 20 25 80 10 mhz 1.8 mhz 30 mhz 1.8 mhz 30 mhz 30 mhz 1.8 mhz
MRFE6VS25Nr1 13 rf device data freescale semiconductor, inc. typical characteristics ? 1.8--30 mhz broadband reference circuit ? two--tone (1) figure 17. intermodulation distortion products versus output power ? 1.8 mhz -- 7 0 -- 2 0 10 7th order p out , output power (watts) pep v dd =50vdc,i dq = 100 ma f1 = 1.795 mhz, f2 = 1.805 mhz two--tone measurements 3rd order -- 3 0 -- 4 0 -- 5 0 20 imd, intermodulatio n distortion (dbc) -- 6 0 5th order 1 figure 18. intermodulation distortion products versus output power ? 10 mhz -- 6 0 -- 2 5 10 7th order p out , output power (watts) pep 3rd order -- 3 0 -- 4 0 -- 5 0 20 imd, intermodulatio n distortion (dbc) -- 5 5 5th order 1 figure 19. intermodulation distortion products versus output power ? 30 mhz -- 6 0 -- 2 5 10 7th order p out , output power (watts) pep v dd =50vdc,i dq = 100 ma f1 = 29.995 mhz, f2 = 30.005 mhz two--tone measurements 3rd order -- 3 0 -- 3 5 -- 4 0 20 imd, intermodulatio n distortion (dbc) -- 5 0 5th order 1 v dd =50vdc,i dq = 100 ma f1 = 9.995 mhz, f2 = 10.005 mhz two--tone measurements -- 4 5 -- 3 5 -- 5 5 -- 4 5 1. the distortion products are referenced to one of the two tones and the peak envelope power (pep) is 6 db above the power in a single tone.
14 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 1.8--30 mhz broadband reference circuit z o =50 ? z source z load f=30mhz f=1.8mhz f=1.8mhz f=30mhz v dd =50vdc,i dq =25ma,p out =25wcw f mhz z source ? z load ? 1.8 44.4 + j12.8 50.8 - j0.70 5 47.2 + j4.40 50.0 - j0.70 10 46.4 + j1.50 49.7 - j0.90 15 46.0 + j0.70 49.4 - j1.60 20 45.7 - j0.40 48.8 - j2.90 25 45.1 - j1.60 47.9 - j4.30 30 44.6 - j2.90 47.0 - j5.70 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 20. broadband series equivalent source and load impedance ? 1.8--30 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
MRFE6VS25Nr1 15 rf device data freescale semiconductor, inc. 1030 mhz narrowband reference circuit table 12. 1030 mhz narrowband performance (in freescale reference circuit, 50 ohm system) v dd =50volts,i dq =25ma signal type p out (w) f (mhz) g ps (db) d (%) cw 25 1030 22.5 60.0 table 13. load mismatch/ruggedness (in freescale reference circuit, 50 ohm system, i dq =25ma) frequency (mhz) signal type vswr p out (w) test voltage, v dd result 1030 pulse (100 sec, 20% duty cycle) >65:1 at all phase angles 30 peak (3 db overdrive) 50 no device degradation cw 31 (3 db overdrive)
16 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 1030 mhz narrowband reference test fixture figure 21. MRFE6VS25Nr1 narrowband refer ence circuit component layout ? 1030 mhz mrfe6vs25h/n rev. 0 cut out area c4 c5 c7 c8 b1 c6 c1 c2 q1 c3 c14 c12 c13 c9 c10 c11 c15 l1 c16 c17 c18 l2 c20 c19 table 14. MRFE6VS25Nr1 narrowband reference ci rcuit component designations and values ? 1030 mhz part description part number manufacturer b1 short ferrite bead 2743019447 fair-rite c1, c3 22 pf chip capacitors atc100b220jt500xt atc c2 6.2 pf chip capacitor atc100b6r2bt500xt atc c4 10 f chip capacitor grm55dr61h106ka88l murata c5 0.01 f chip capacitor grm319r72a103ka01d murata c6 43 pf chip capacitor atc100b430jt500xt atc c7 0.1 f chip capacitor grm32mr71h104ja01l murata c8 1.0 f chip capacitor grm31mr71h105ka88l murata c9 0.1 f chip capacitor c1206c104k1rac-tu kemet c10 20k pf chip capacitor atc200b203kt50xt atc c11 470 pf chip capacitor atc100b471jt200xt atc c12, c13 22 f chip capacitors c5750kf1h226zt tdk c14 470 pf, 63 v electrolytic capacitor mcgpr63v477m13x26-rh multicomp c15, c17 4.3 pf chip capacitors atc100b4r3ct500xt atc c16, c19 0.6-4.5 pf tuning capacitors 27271sl johanson components c18 2.2 pf chip capacitor atc100b2r2jt500xt atc c20 20 pf chip capacitor atc100b200jt500xt atc l1 43 nh, 10 turn inductor b10tjlc coilcraft l2 2.5 nh, 1 turn inductor a01tklc coilcraft q1 rf power ldmos transistor MRFE6VS25Nr1 freescale pcb 0.030 , r =3.5 tl350 arlon
MRFE6VS25Nr1 17 rf device data freescale semiconductor, inc. z1 0.200 0.080 microstrip z2 0.569 0.120 microstrip z3 0.339 0.320 microstrip z4 0.272 0.320 microstrip z5, z12 0.160 0.320 0.620 taper z6 0.522 0.620 microstrip z7 0.218 0.620 microstrip z8* 0.094 1.121 microstrip z9 0.350 0.378 microstrip z10 0.151 0.108 microstrip z11 0.699 0.620 microstrip z13 0.243 0.320 microstrip z14 0.350 0.320 microstrip z15 0.450 0.107 microstrip z16 0.200 0.107 microstrip * line length includes microstrip bends table 15. MRFE6VS25Nr1 narrowband reverence test circuit microstrips ? 1030 mhz description microstrip description microstrip figure 22. MRFE6VS25Nr1 narrowband reference circuit schematic ? 1030 mhz z1 rf input c1 z2 z4 dut c20 rf output v bias v supply c5 c11 c14 + z14 z3 z5 c7 z13 z12 z11 z10 z8 z7 z6 c4 z15 c10 c2 c3 b1 c8 l1 c19 z16 z9 c6 c9 c12 c13 l2 c18 c15 c17 c16
18 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 typical characteristics ? 1030 mhz narrowband reference circuit 0 v gs , gate--source voltage (volts) figure 23. cw output power versus gate--source voltage at a constant input power 0 30 p out , output power (watts) 20 10 0.5 1 2.5 3 1.5 2 3.5 v dd =50vdc p in =0.14w f = 1030 mhz 25 15 5 figure 24. cw output power versus input power p in , input power (dbm) 38 42 p out , output power (dbm) 40 44 46 36 16 18 1030 29 31 f (mhz) p1db (w) p3db (w) 22 26 v dd =50vdc i dq =25ma f = 1030 mhz 19 23 0 25 65 10 22 21 50 45 40 35 30 p out , output power (watts) figure 25. power gain and drain efficiency versus cw output power g ps , power gain (db) d, drain efficiency (%) 21.5 20.5 20 30 35 22.5 55 g ps v dd =50vdc i dq =25ma f = 1030 mhz d 19.5 15 20 25 60 4 20 24 5
MRFE6VS25Nr1 19 rf device data freescale semiconductor, inc. 1030 mhz narrowband reference circuit v dd =50vdc,i dq =25ma,p out =25wcw f mhz z source ? z load ? 1030 0.74 + j4.53 3.08 + j7.78 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 26. narrowband series equivalent source and load impedance ? 1030 mhz input matching network device under test output matching network z source z load 50 ? 50 ?
20 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 package dimensions
MRFE6VS25Nr1 21 rf device data freescale semiconductor, inc.
22 rf device data freescale semiconductor, inc. MRFE6VS25Nr1
MRFE6VS25Nr1 23 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following documents, software and tools to aid your design process. application notes ? an1907: solder reflow attach method for high power rf devices in over--molded plastic packages ? an1955: thermal measurement methodology of rf power amplifiers ? an3263: bolt down mounting method for high power rf transistors and rfics in over--molded plastic packages ? an3789: clamping of high power rf transistors and rfics in over--molded plastic packages engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices ? eb38: measuring the intermodulation distortion of linear amplifiers software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards for software and tools, do a part number search at http://www.fr eescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. revision history the following table summarizes revisions to this document. revision date description 0 june 2012 ? initial release of data sheet
24 rf device data freescale semiconductor, inc. MRFE6VS25Nr1 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: http://www.reg.net/v2/webservices/freescale/docs/termsandconditions.htm. freescale, the freescale logo, altivec, c--5, codetest, codewarrior, coldfire, c--ware, energy efficient solutions logo, kinetis, mobilegt, powerquicc, processor expert, qoriq, qorivva, starcore, symphony, and vortiqa are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast, beekit, beestack, coldfire+, corenet, flexis, magniv, mxc, platform in a package, qoriq qonverge, quicc engine, ready play, safeassure, smartmos, turbolink, vybrid, and xtrinsic are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2012 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: MRFE6VS25N rev. 0, 6/2012

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